Reverse self-aligned transistor integrated circuit

Details Reverse self-aligned transistor integrated circuit Reverse self-aligned transistor integrated circuit

1990-08-27

1991-12-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437 44, 437162, 148DIG123, H01L 21225, H01L 21328, H01L 21336

Patent

active

050717804

ABSTRACT:
A method of forming self-aligned transistors which may be either bipolar or field effect is described. A heavily doped conductive layer of one conductivity type is formed upon a monocrystalline semiconductor substrate of the opposite conductivity type to that of the one type. The conductive layer may be polycrystalline silicon, tungsten silicide, titanium nitride or the like. An insulator layer is formed upon the surface of the conductive layer. Openings with substantially vertical sidewalls are formed through the conductive layer to the semiconductor substrate in at least the locations of the first element of the transistors to be formed. The structure is heated to form the heavily doped portions of the second element of said transistors of the one conductivity type by outdiffusing from the conductive layer. Controlled oxidation of the exposed substrate and sidewalls of the conductive layer is done until the desired low doped portion of the heavily doped portions of the second element of the transistor has been formed under the oxidized semiconductor substrate. This second element is the base where a bipolar transistor is being formed and the source/drain where a field effect transistor is being formed. A uniform thickness conformal insulating layer is then deposited on the insulator layer over the conductive layer and oxidized substrate and preferentially removing the insulating layer from the horizontal surfaces and leaving a sidewall insulating layer upon the substantially vertical sidewalls. The integrated circuit is completed and the appropriate electrical contacts are made to the elements of the transistors of the integrated circuit.

REFERENCES:
patent: 4209349 (1980-06-01), Ho et al.
patent: 4209350 (1980-06-01), Ho et al.
patent: 4234362 (1980-11-01), Riseman
patent: 4256514 (1981-03-01), Pogge
patent: 4366613 (1983-01-01), Ogura et al.
patent: 4378627 (1983-04-01), Jambotkar
patent: 4419810 (1983-12-01), Riseman
patent: 4471522 (1984-09-01), Jambotkar
patent: 4581319 (1986-04-01), Wieder et al.
patent: 4722908 (1988-02-01), Burton
patent: 4735916 (1988-04-01), Homma et al.
patent: 4746629 (1988-05-01), Hanagasaki
patent: 4780427 (1988-10-01), Sakai et al.
patent: 4826782 (1989-05-01), Sachitano et al.
patent: 4830972 (1989-05-01), Hamasaki
patent: 4845046 (1989-07-01), Shimbo
patent: 4879252 (1989-11-01), Komatsu
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4902640 (1990-02-01), Sachitano
patent: 4908324 (1990-03-01), Nihira et al.
patent: 4939154 (1990-07-01), Shimbo
patent: 4946798 (1990-08-01), Kawakatsu
patent: 4960726 (1990-10-01), Lechaton et al.
patent: 4975381 (1990-12-01), Taka et al.

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