Multilayered intermetallic connection for semiconductor devices

Details Multilayered intermetallic connection for semiconductor devices Multilayered intermetallic connection for semiconductor devices

1989-04-17

1991-12-10

Zimmerman, John J.

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428651, 20419217, 357 71, B32B 1520, C23C 1416, C23C 1434

Patent

active

050717146

ABSTRACT:
A sputtered low copper concentration multilayered, device interconnect metallurgy structure is disclosed herein. The interconnect metallization structure comprises a sputtered aluminum-copper (<2) weight percent copper conductor. In the preferred embodiment, the AlCu conductor has formed on one or both of its surfaces a layer of an intermetallic compound formed from a Group IVA metal and aluminum. The Group IVA metal is deposited by sputtering. Optionally, onto said top intermetallic layer is further deposited a non-reflective, non-corrosive, etch-stop, capping layer.

REFERENCES:
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patent: 4673623 (1987-06-01), Gardner et al.
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