Substrate for semiconductor device

Details Substrate for semiconductor device Substrate for semiconductor device

Filed on

1996-01-05

Date issued

1997-10-28

Examiner

Thomas, Tom

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Housing or package

SubSubClass

With contact or lead

Other Related Categories

257 77, 257702, 257705, 257750, H01L 23053, H01L 2312

Type

Patent

Status

active

Patent number

056820631

Description

ABSTRACT:
The present invention relates to a substrate for a semiconductor device having a diamond base material and a multisublayer wiring layer on the diamond base material, wherein the diamond base material is a diamond layer prepared by vapor phase deposition. The multisublayer wiring layer has at least one insulating sublayer having a relative dielectric constant of not larger than 5 or at least 12 and at least one metal wiring sublayer. The present invention is particularly useful as a substrate for a high performance, high-speed operation semiconductor device.

REFERENCES:
patent: 5239746 (1993-08-01), Goldman
patent: 5298749 (1994-03-01), Inushima
Patent Abstracts of Japan, vol. 17, No. 276 (E-1372) May 27, 1993 & JP-A-05 013 610 (Fujitsu Ltd) Jan. 22, 1993 *abstract*.
Patent Abstracts of Japan, vol. 6, No. 222 (E-140) Nov. 6, 1982 & JP-A-57 126 154 (Nippon Denki K.K.) Aug. 5, 1982 *abstract*.
Charles, Jr., "Packaging With Multichip Modules", IEEE/CHMT Int'l Electronics Manufacturing Technology Symposium pp. 206-210 no date.
"Comprehensive Electronic Part Handbook (Sogo Densibuhin Handbook)" edited by Nihon Denshikikai Kogyokai, pp. 1120-1123. no date.

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