Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-08-02
1997-10-28
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 50, 257530, 257533, 257360, H01L 2904, H01L 2362, H01L 2900
Patent
active
056820496
ABSTRACT:
An integrated circuit and method for using same is constructed on a semiconductor substrate (15) with a structure (24) in the substrate (15) having an electrical value desired to be trimable and with a conducting layer (33) on the substrate (15) insulated (30) from the structure (14) except at one location (26), which is electrically connected to a first part of the structure (24). An oxide layer (48) separates one portion of the structure (24) from a part of the conductor (33). The second oxide layer (48) has a predetermined breakdown voltage such that when a voltage, V.sub.TRIM, larger than the second predetermined breakdown voltage is applied between the conductor (33) and the structure (24), the second oxide layer (48) breaks down, shorting the first and second parts (46, 50) of the structure (24) to trim its value.
REFERENCES:
patent: 4786956 (1988-11-01), Puar
patent: 4941028 (1990-07-01), Chen et al.
patent: 5341267 (1994-08-01), Whitten et al.
patent: 5498895 (1996-03-01), Chen
Brady III W. James
Donaldson Richard L.
Martin Wallace Valencia
Meier Stephen
Swayze, Jr. W. Daniel
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