Process for manufacturing a semiconductor laser having a buried

Details Process for manufacturing a semiconductor laser having a buried Process for manufacturing a semiconductor laser having a buried

1985-12-10

1987-03-10

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29569L, 29576E, 29580, 148175, 148186, 156655, 1566591, 156662, 357 16, 357 17, 357 56, 357 65, H01L 21306, H01L 21205, H01L 2122, B44C 122

Patent

active

046489401

ABSTRACT:
Process for manufacturing a semiconductor laser having a buried ribbon. After making a double heterostructure (2, 3, 4, 5) on a substrate (1), there is implanted in the contact layer (5) a p-type doping material, which has the effect of rendering it amorphous. The unit, except for a ribbon, is etched which leaves a mesa. A resumption of epitaxy makes it possible to bury the channel. This resumption does not lead to a crystalline growth on the upper surface of the contact layer, although the annealing that takes place during the resumption of epitaxy gives good ohmic contacts at the level of the implanted layer.

REFERENCES:
patent: 4213805 (1980-07-01), Tsukada
patent: 4468850 (1984-09-01), Liau et al.

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