Integrated high-voltage bipolar power transistor and low voltage

Details Integrated high-voltage bipolar power transistor and low voltage Integrated high-voltage bipolar power transistor and low voltage

1995-05-22

1997-10-28

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, 257335, 257341, 257378, 257401, 257408, 257566, 257577, 257591, 257592, H01L 2976

Patent

active

RE0356425

ABSTRACT:
A description is given of two versions of an integrated structure in the emitter switching configuration comprising a high-voltage bipolar power transistor on a low-voltage MOS power transistor. In the vertical MOS version, the emitter region of the bipolar transistor is completely buried, partly in a first N-epitaxial layer and partly in a second N epitaxial layer; the MOS is located above the emitter region. The bipolar is thus completely buried active sturcture. In the horizontal MOS version, in a N-epitaxial layer there are two P+regions, the tint, which constitutes the base of the bipolar transistor, receives the N+emitter region of the same transistor; the second receives two N+regions which constitute the MOS source and drain regions, respectively; the front of the chip is provided with metal plating to ensure the connection between the MOS drain and the bipolar emitter contacts.

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