Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1991-01-07
1991-11-12
Bowler, Alyssa H.
Static information storage and retrieval
Systems using particular element
Flip-flop
36518905, G11C 700, G11C 11407, G11C 800
Patent
active
050653636
ABSTRACT:
Each memory cell of the memory array has a latch circuit, such as a pair of cross-connected CMOS inverters, for storing information, a first switch MOSFET whose gate is connected with a word line, and a second switch MOSFET which is connected in series with the first switch MOSFET and the gate of which is connected with the output terminal of the latch circuit. The first and second switch MOSFETs are coupled between the data line and a terminal supplied with a first power source voltage level, such as reference ground potential. Such memory cells are disposed at intersections of a plurality of data lines and a plurality of word lines. One of the plurality of data lines is connected with a common data line through a column switch which is alternatively brought into an ON state. Prior to a reading operation, the data lines are prechanged to the first power-source voltage level, or ground potential, and the common data line is precharged to a second power-source voltage level, such as the supply voltage of the memory. The memory array is implemented in a semiconductor storage device, such as a static RAM, which is characterized as operating either as a one-port or two-port system and wherein it, furthermore, employs a write amplifier circuit arrangement and a sense amplifier arrangement, such as of the single-ended differential type, wherein the write and sense amplifier arrangements can be disposed either on separate common data lines or on a single common data line.
REFERENCES:
patent: 4768172 (1988-08-01), Sasaki
patent: 4802122 (1989-01-01), Avvinen et al.
patent: 4807194 (1989-02-01), Yamada et al.
patent: 4984204 (1991-01-01), Sato et al.
Mizukami Masao
Sato Yoichi
Bowler Alyssa H.
Hitachi , Ltd.
Hitachi VLSI Engineering Corp.
LandOfFree
Semiconductor storage device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor storage device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1017685