Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1983-03-07
1986-02-25
Moffitt, James W.
Static information storage and retrieval
Systems using particular element
Semiconductive
G11C 1138
Patent
active
045731438
ABSTRACT:
A semiconductor memory device has at least one memory cell which includes first and second tunnel diodes connected in series in a forward-bias direction between first and second power source terminals. The first and second power source terminals are held at constant potentials. A switching MOS transistor is connected at one end to a connection point between the first and second tunnel diodes. The potential at the connection point between the first and second tunnel diodes is determined by the potential at the other end of the switching MOS transistor.
REFERENCES:
patent: 3855582 (1974-12-01), Roberts
Data of an Expert Committee on the Research of Electronic Computers--the Institute of Electronics and Communications Engineers of Japan--"Possibility of Super High-Speed Computers Using an Esaki Diode".
Moffitt James W.
Tokyo Shibaura Denki Kabushiki Kaisha
LandOfFree
Semiconductor memory device having tunnel diodes does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device having tunnel diodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having tunnel diodes will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1015379