Semiconductor memory device having tunnel diodes

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

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Other Related Categories

G11C 1138

Type

Patent

Status

active

Patent number

045731438

Description

ABSTRACT:
A semiconductor memory device has at least one memory cell which includes first and second tunnel diodes connected in series in a forward-bias direction between first and second power source terminals. The first and second power source terminals are held at constant potentials. A switching MOS transistor is connected at one end to a connection point between the first and second tunnel diodes. The potential at the connection point between the first and second tunnel diodes is determined by the potential at the other end of the switching MOS transistor.

REFERENCES:
patent: 3855582 (1974-12-01), Roberts
Data of an Expert Committee on the Research of Electronic Computers--the Institute of Electronics and Communications Engineers of Japan--"Possibility of Super High-Speed Computers Using an Esaki Diode".

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