Resist development method

Details Resist development method Resist development method

1985-05-17

1987-03-03

Perkey, William B.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156626, 430 30, G03D 504, H01L 21306

Patent

active

046471723

ABSTRACT:
In the resist development method disclosed herein, the spin development of a resist coating on the surface of a semiconductor wafer is monitored by measuring light scattered back from the wafer surface from an incandescent source. During development, the sensed light level oscillates due to optical fringing caused by the thinning of the resist layer in the exposed areas and the fringe generated oscillation essentially stops when the development breaks through in the exposed areas. By comparing sample data obtained from the sensed light level with template data representing a known or characteristic behavior, a control point corresonding to the last fringe may be determined. Development is then terminated a calculated time after the control point.

REFERENCES:
patent: 4136940 (1979-01-01), Lin
patent: 4462860 (1984-07-01), Szmanda
patent: 4469424 (1984-09-01), Matsui et al.
patent: 4493745 (1985-01-01), Chen et al.
patent: 4501480 (1985-02-01), Matsui et al.
patent: 4569717 (1986-02-01), Ohgami et al.

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