Coherent light generators – Particular active media – Semiconductor
Patent
1990-01-05
1991-08-20
Epps, Georgia
Coherent light generators
Particular active media
Semiconductor
372 46, 372 50, 372 96, H01S 319
Patent
active
050420496
ABSTRACT:
A semiconductor optical device in which an optical waveguide (3, 11) provided on a semiconductor substrate (1) comprises a strained-layer superlattice shows an extremely small transmission loss. A semiconductor optical device with further improved characteristics is obtainable by using a stained-layer superlattice for a portion required to show a great change in refractive index, such as an optical crosspoint switch portion (10), as well as for the optical waveguide (3, 11). The strained-layer superlattice comprises a first semiconductor layer and a second semiconductor layer having a narrower band gap and a greater lattice constant as compared with the first semiconductor layer, the two layers grown periodically.
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Chinone Naoki
Ohtoshi Tsukuru
Sakano Shinji
Uomi Kazuhisa
Epps Georgia
Hitachi , Ltd.
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