Method and apparatus for performing epitaxial growth of ZnSe cry

Details Method and apparatus for performing epitaxial growth of ZnSe cry Method and apparatus for performing epitaxial growth of ZnSe cry

1983-07-13

1986-02-25

Richman, Barry S.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156621, 156DIG72, 156DIG77, 422248, C30B 906

Patent

active

045727635

ABSTRACT:
In conducting a liquid phase epitaxial growth of a Zn crystal on a substrate wherein a batch of Se melt serving as a solvent is used and relying on a vapor pressure controlling technique and a temperature difference method, a Zn vapor pressure controlling region is disposed, via the Se melt, in a direction vertical to the surface of the substrate which is contained in the growth region, and a ZnSe source crystal is disposed in such a way that it is supplied into the Se melt in a lateral direction of this melt. Whereby, a ZnSe single crystal having a good crystal perfection, and a good linearity of the thickness of the grown crystal relative to time can be obtained.

REFERENCES:
patent: 3231337 (1966-01-01), Barkemeyer et al.
patent: 3796548 (1974-03-01), Boss et al.
patent: 4315796 (1982-02-01), Nishizawa
patent: 4438323 (1984-03-01), Milnes

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