Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1989-02-03

1991-08-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437981, 148DIG42, 148DIG161, H01L 2102

Patent

active

050413970

ABSTRACT:
A method of forming a PSG layer on a semiconductor substrate containing semiconductor elements by chemical vapor deposition is characterized in that the concentration of the PSG layer is gradually increased from the substrate surface toward the uppermost surface of the PSG layer.

REFERENCES:
patent: 3793070 (1974-02-01), Schoolar
patent: 3969743 (1976-07-01), Gorski
patent: 4066481 (1978-01-01), Manasevit et al.
patent: 4154631 (1979-05-01), Schoolar
patent: 4263604 (1981-04-01), Jensen et al.
patent: 4582745 (1984-01-01), Schuable
Ghandi, S. K., VLSI Fabrication Principles, John Wiley and Sons, 1983 p. 494.
Colclaser, R. A., Microelectronics, John Wiley and Sons, 1980 p. 122.

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