Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1991-03-06
1993-10-05
Kunemund, Robert
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156610, 156DIG68, 423446, 502 86, 437937, 437946, C30B 2904
Patent
active
052501493
ABSTRACT:
A heating process for producing a high quality diamond or c-BN film on a diamond or c-BN substrate comprising placing a diamond or c-BN substrate in vacuum, elevating the temperature and treating its surface with a chlorine containing gas, a fluorine containing gas, a nitrogen containing plasma or a hydrogen containing plasma. The treatment gas is then removed and feed gases are introduced which are suitable for growing a thin diamond or c-BN film on the surface substrate under chemical vapor deposition conditions.
REFERENCES:
patent: 3501336 (1970-03-01), Dyer et al.
patent: 3522118 (1970-07-01), Taylor et al.
patent: 3714334 (1973-01-01), Vickery
patent: 4436761 (1984-03-01), Hayashi et al.
patent: 4605479 (1986-08-01), Faith
patent: 4816286 (1989-03-01), Hirose
patent: 5015494 (1991-05-01), Yamazaki
Gildenblat et al. "High Temperature Schottky Diodes with Buron Doped Homoepitaxial Diamond Base", Mat. Res. Bull. vol. 25 (1) Jan. 1990 pp. 129-134.
Jeng et al., "Oriented Cubic Neucleations and Local Epitaxy During Diamond Growth on Silicon (100) Substrates", Applied Physics Letters, vol. 56, #20, pp. 1968-1970, May 14, 1990.
Shiomi et al., "Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma Assisted Chemical Vapor Deposition Method", Japanese Journal of Applied Physics, vol. 29, No. 1, pp. 34-40, Jan. 1990.
Fujita Nobuhiko
Kimoto Tsunenobu
Tomikawa Tadashi
Kunemund Robert
Sumitomo Electric Industries Ltd.
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