4. Semiconductor device manufacturing: process
  5. Introduction of conductivity modifying dopant into...
  6. Ion implantation of dopant into semiconductor region

Yuri V. Melnik

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Bulk GaN and ALGaN single crystals

Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate

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III-V compound semiconductor device with an...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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III-V compounds semiconductor device with an...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate

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Manufacturing methods for semiconductor devices with...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Method for achieving low defect density GaN single crystal...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2095731

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