4. Active solid-state devices (e.g., transistors, solid-state diode
  5. With means to control surface effects

Yoshimitsu Yamada

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Silicon carbide single-crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Reexamination Certificate

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Single crystal SiC

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2456792

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