4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With decomposition of a precursor

Vitali Soukhoveev

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Bulk GaN and ALGaN single crystals

Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate

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Method for achieving low defect density GaN single crystal...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Method for fabricating bulk AlGaN single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Method for fabricating bulk GaN single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate

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Reactor for extended duration growth of gallium containing...

Coating apparatus – Gas or vapor deposition – Multizone chamber
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2595502

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