4. Pulse or digital communications
  5. Spread spectrum
  6. Direct sequence

Scott C. Krieger

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Asymmetric MOS channel structure with drain extension and...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate

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Asymmetrical MOS channel structure with drain extension

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate

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C-axis oriented lead germanate film

Compositions – Piezoelectric
Reexamination Certificate

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C-axis oriented lead germanate film and deposition method

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate

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Capacitor utilizing c-axis oriented lead germanate film

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2017018

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