Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
Inventor
active
Fabrication of self-aligned, T-gate HEMT
Method of growing high breakdown voltage allnas layers in InP de
No associations
LandOfFree
Linda M. Jelloian does not yet have a rating. At this time, there are no reviews or comments for this inventor.
If you have personal experience with Linda M. Jelloian, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Linda M. Jelloian will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-P-1564180