4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With decomposition of a precursor

Koji Ebara

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Method for measuring resistivity of semiconductor wafer

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate

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Production method for silicon epitaxial wafer and silicon...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Time recorder

Incremental printing of symbolic information – Thermal marking apparatus or processes
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Profile ID: LFUS-PAI-P-2600992

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