4. Static information storage and retrieval
  5. Floating gate
  6. Particular biasing

Evgeny Pikhay

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NROM memory device with enhanced endurance

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Three-terminal single poly NMOS non-volatile memory cell

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Profile ID: LFUS-PAI-P-3132670

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