4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Apparatus

Charles Chiun-Chieh Yang

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Epitaxial silicon wafer free from autodoping and backside...

Metal treatment – Barrier layer stock material – p-n type – With contiguous layer doped to degeneracy
Reexamination Certificate

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Method and apparatus for forming a silicon wafer with a...

Semiconductor device manufacturing: process – Gettering of substrate
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Method for the preparation of an epitaxial silicon wafer...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Reexamination Certificate

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Modified susceptor for use in chemical vapor deposition process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate

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Modified susceptor for use in chemical vapor deposition process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate

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