Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
118719, 156345, 204298, 414217, 414221, C23C 1456
A novel method and machine are provided for processing workpieces at one or more work-stations under vacuum conditions. The machine comprises means for receiving at atmospheric pressure an object to be processed, an inlet lock that is connected to a vacuum manifold, at least one processing station that is at a pressure at least as low as 10.sup.-1 to 10.sup.-6 mm. Hg., means for conveying work-pieces to be processed into and through the input lock to said at least one processing station so that the pressure within the processing chamber is not adversely affected by introduction of workpieces thereto via the input lock, an output lock, and means for transferring workpieces from said at least one processing station into the output lock so that the pressure in said at least one processing station is not adversely affected by such transfer.
patent: 4500407 (1985-02-01), Boys et al.
patent: 4733631 (1988-03-01), Boyarsky et al.
patent: 4735540 (1988-04-01), Allen et al.
patent: 4808291 (1989-02-01), Denton et al.
Landau Richard F.
Millikin Jr. William E.
Puchacz Jerzy P.
Reyes Manolito Q.
Oerlikon-Buhrle U.S.A. Inc.
High vacuum processing system and method does not yet have a rating. At this time, there are no reviews or comments for this patent.If you have personal experience with High vacuum processing system and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High vacuum processing system and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-119368