Single-poly EPROM cell with CMOS compatible programming voltages

Details Single-poly EPROM cell with CMOS compatible programming voltages Single-poly EPROM cell with CMOS compatible programming voltages

1998-04-01

2000-04-25

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518514, 36518528, G11C 1604

Patent

active

060551852

ABSTRACT:
The Frohmann-Bentchkowsky EPROM cell is programmed by utilizing biasing voltages which are sufficient to induce hot punchthrough holes to flow from the source region to the drain region, and insufficient to induce avalanche breakdown at the drain-to-semiconductor material junction. In addition, the Frohmann-Bentchkowsky EPROM cell is programmable with CMOS compatible voltages by forming the physical floating gate length of the cell to be less than the minimum physical gate length of the CMOS devices.

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D. Frohmann-Bentchkowsky, "A Fully Decoded 2048-bit Electrically-Programmable MOS-ROM," 1971 IEEE International Solid-State Circuits Conference, Feb. 18, 1971, ISSCC Digest of Technical papers, pp. 80-81; p. 200, Univ. of Pennsylvania.
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