Interconnection system in a semiconductor device

Details Interconnection system in a semiconductor device Interconnection system in a semiconductor device

1998-01-28

2000-04-25

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257758, H01L 2348, H01L 2352, H01L 2940

Patent

active

060547715

ABSTRACT:
An interconnection system in a semiconductor device comprises a Ti.sub.2 N film having a lower resistivity and a higher thermal stability at a higher temperature compared to a TiN film. The Ti.sub.2 N film is formed by rapid thermal annealing of a TiN film and a Ti film consecutively formed on an insulator film. The rapid thermal treating is effected in a nitrogen ambient at a substrate temperature of 700 to 900.degree. C. for 30 to 120 seconds.

REFERENCES:
patent: 5345108 (1994-09-01), Kikkawa
patent: 5506449 (1996-04-01), Nakano et al.
patent: 5811851 (1998-09-01), Nishioka et al.
patent: 5939788 (1999-08-01), McTeer
"TiN as a Diffusion Barrier in the Ti-Pt-Au Beam-Lead Metal System" Garceau et al The Solid FIlms, 60 (1979); pp. 237-247.

Affiliated with

Also associated with

Rating

Interconnection system in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Interconnection system in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnection system in a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-995497