Light-emitting diode, light-emitting diode array

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

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257 90, 257 94, 257 96, 257 97, 257103, H01L 3300

Patent

active

060547243

ABSTRACT:
A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.

REFERENCES:
patent: 3963538 (1976-06-01), Broadie et al.
patent: 3963539 (1976-06-01), Kemlage et al.
patent: 4644342 (1987-02-01), Abbas
patent: 4897699 (1990-01-01), Razeghi et al.
patent: 4928154 (1990-05-01), Umeno et al.
patent: 4963508 (1990-10-01), Umeno et al.
patent: 5107317 (1992-04-01), Takasaki
Yoshihiro Takekida, "Design of Optical Printers", 1985 pp. 121-126.

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