Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Patent
1997-09-04
2000-04-25
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
257 90, 257 94, 257 96, 257 97, 257103, H01L 3300
Patent
active
060547243
ABSTRACT:
A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.
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Yoshihiro Takekida, "Design of Optical Printers", 1985 pp. 121-126.
Hamano Hiroshi
Nakamura Yukio
Ogihara Mitsuhiko
Taninaka Masumi
Frank Robert J.
Mintel William
OKI Electric Industry Co., Ltd.
Voorhees Catherine M.
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