Semiconductor device with improved wiring contact portion

Details Semiconductor device with improved wiring contact portion Semiconductor device with improved wiring contact portion

1990-07-13

1991-10-15

Hille, Rolf

357 71, 357 59, H01L 2140

Patent

active

050578995

ABSTRACT:
A semiconductor device includes a semiconductor layer, an insulating layer on the semiconductor layer, including a discontinuity therein, a monocrystalline silicon layer on a portion of semiconductor layer defined by the discontinuity, a non-monocrystalline silicon layer on the monocrystalline silicon layer, and a wiring layer on the non-monocrystalline silicon layer.

REFERENCES:
patent: 3681668 (1972-08-01), Kobayashi
patent: 4563807 (1986-01-01), Sakai et al.
"Low-Resistive and Selective Silicon Growth as a Self-Aligned Contact Hole Filler and its Application to 1M bit Static RAM", Shibata et al., pp. 75-76.
Solid State Technology/Aug. 1985, pp. 141-148; "Advanced Dielectric Isolation Through Selective Epitaxial Growth Techniques", Borland et al.

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