Method for fabricating capacitor

Details Method for fabricating capacitor Method for fabricating capacitor

1999-05-06

2000-12-26

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438733, 438742, H01L 21302

Patent

active

061659096

ABSTRACT:
A method for fabricating a capacitor is described. A dielectric layer and a polysilicon layer thereon are provided. A patterned oxide layer and spacers on the sidewalls of the patterned oxide layer are formed. The polysilicon layer is etched using the oxide layer and spacer as an etching mask. The oxide layer and spacer are then removed. A dielectric layer and a conductive layer are sequentially formed on the polysilicon layer.

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patent: 5792689 (1998-08-01), Yang et al.
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patent: 6001717 (1999-12-01), Lien
patent: 6037217 (2000-03-01), Linliu

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