Semiconductor light emitting device with Group II-IV and III-V s

Details Semiconductor light emitting device with Group II-IV and III-V s Semiconductor light emitting device with Group II-IV and III-V s

1994-06-15

1995-12-19

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257103, 257200, 372 45, 372 46, 372 48, H01L 3300

Patent

active

054770637

ABSTRACT:
In a semiconductor light emitting device of a group II-V semiconductor, a current blocking layer for passing the current only through a central stripe area is formed in one of the two light clad layers sandwiching an active layer, so that the light emission efficiency improves and a light guiding path is provided. In a process for forming each layer on a substrate through epitaxial growth, the central stripe area is formed by etching the current blocking layer.

REFERENCES:
patent: 4329660 (1982-05-01), Yano et al.
patent: 5324963 (1994-06-01), Kamata

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