Method of manufacturing semiconductor gas rate sensor

Details Method of manufacturing semiconductor gas rate sensor Method of manufacturing semiconductor gas rate sensor

1995-02-06

1995-12-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

156292, 7351403, 437927, 148DIG12, 148DIG73, H01L 2100, H01L 2310

Patent

active

054768209

ABSTRACT:
A semiconductor gas rate sensor includes a base composed of a first semiconductor substrate and a second semiconductor substrate bonded thereto by a thermosetting adhesive layer deposited on a mating surface of the second semiconductor substrate, the base having a gas flow passage defined therein and a nozzle defined therein for injecting a gas flow into the gas flow passage, and a detector disposed in and extending across the gas flow passage for detecting a deflected state of the gas flow when an angular velocity acts on the base, the nozzle being formed between a recess defined in mating surface of the first semiconductor substrate and the mating surface of the second semiconductor substrate. To manufacture the semiconductor gas rate sensor, the first semiconductor substrate and the second semiconductor substrate are joined to each other with the thermosetting adhesive layer on the mating surface of the second semiconductor substrate, and thereafter, the first semiconductor substrate and the second semiconductor substrate are heated while the second semiconductor substrate is being kept underneath the first semiconductor substrate.

REFERENCES:
patent: 5107707 (1992-04-01), Takahashi et al.
patent: 5164218 (1992-11-01), Tsuruta et al.
patent: 5385046 (1995-01-01), Yamakawa et al.

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