Method of manufacturing semiconductor device utilizing selective

Details Method of manufacturing semiconductor device utilizing selective Method of manufacturing semiconductor device utilizing selective

1994-06-29

1995-12-19

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437193, 437195, 437200, 437203, 437246, H01L 21283

Patent

active

054768144

ABSTRACT:
A method of manufacturing semiconductor devices includes the step of forming a first conductive region of a first conductive material for effecting a growth of a conductive film thereon by a selective growth method. Also, a second conductive region of a second conductive material for not effecting a growth of a conductive film is formed in the selective growth method. An insulating layer is covered with the first and second conductive regions. Further, a through hole in the insulating layer for filling the hole with the conductive film is formed. The conductive film is grown within the through hole over the first conductive region, thereby filling the through hole with the conductive film.

REFERENCES:
patent: 4622735 (1986-11-01), Shibata
patent: 4902533 (1990-02-01), White
patent: 5002902 (1991-03-01), Watanabe
patent: 5023201 (1991-06-01), Stanasolovich et al.
patent: 5192713 (1993-03-01), Harada
patent: 5204286 (1993-04-01), Doan
patent: 5286673 (1994-02-01), Nishihara
patent: 5324536 (1994-06-01), Yonehara

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