Plasma deposition process with substrate temperature control

Details Plasma deposition process with substrate temperature control Plasma deposition process with substrate temperature control

1993-11-26

1995-12-19

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437101, 437113, 427574, 427575, 427578, 136258, 430 65, H01L 3120

Patent

active

054767989

ABSTRACT:
In a glow discharge deposition process for the preparation of hydrogenated, Group IV semiconductor alloys, the substrate is maintained at a temperature which is positively correlated with the deposition rate and which is high enough to impart sufficient kinetic energy to the layer to activate the removal of undesirable morphologies, but low enough to prevent degradation of the layer caused by the excessive loss of hydrogen.

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