Method for making a semiconductor bump electrode with a skirt

Details Method for making a semiconductor bump electrode with a skirt Method for making a semiconductor bump electrode with a skirt

1990-05-29

1991-10-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437249, H01L 2144

Patent

active

050574531

ABSTRACT:
A semiconductor device having a bump electrode on a semiconductor substrate above an electrode pad and metal film. The shape of the bump electrode is composed of a cubical portion and a skirt extending outward from the bottom of the cubical portion. In manufacturing such a semiconductor device, a dry film is used which is laminated on the metal film under a certain laminating condition and formed with an opening. A bump material is formed as a deposit on the metal film within the opening, through electrolytic plating. The deposit has the cubical portion corresponding in shape to the opening, and the skirt extending outward into a space between the dry film and the metal film, from the bottom of the cubical portion. The metal film is etched out using the deposit as a mask to thereby make the deposit as a bump electrode of the semiconductor device.

REFERENCES:
patent: 4427715 (1984-01-01), Harris
patent: 4855251 (1989-08-01), Iyogi et al.

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