Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1991-02-05

1991-10-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437173, 437174, 437 89, 437973, 148DIG93, 148DIG154, H01L 2120, H01L 21268

Patent

active

050574523

ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device in which a polycrystalline or amorphous silicon oxide layer 3, which is provided on a silicon oxide layer 2 on a monocrystalline silicon substrate 1 and which is in contact with the silicon substrate 1 via an opening 4 in the silicon layer 2, is recrystallized by means of a heat treatment in the presence of means for concentrating the heat at the opening 4. In a simple and inexpensive manner, these means consist of a second silicon oxide layer 5 and a second polycrystalline silicon layer 6, the second silicon oxide layer 5 having a thickness at the openings 4 which is smaller than that of the rest of the layer 5.

REFERENCES:
patent: 4358326 (1982-11-01), Doo
patent: 4523962 (1985-06-01), Nishimura
patent: 4592799 (1986-06-01), Hayafujii
patent: 4714684 (1987-12-01), Sugahara et al.
patent: 4915772 (1990-04-01), Fehlner et al.

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