Method of manufacturing semiconductor camera tube targets

Details Method of manufacturing semiconductor camera tube targets Method of manufacturing semiconductor camera tube targets

1965-08-05

1976-10-19

Tudor, Harold J.

29 2514, 29 2517, 29572, 317 19, H02H 102

Patent

active

039867617

ABSTRACT:
1. The method of manufacturing a camera tube target from a semiconductor material for placement in a camera tube prior to degassing thereof comprising the steps of initially doping the semiconductor material with an impurity for rendering it sensitive to a desired radiation spectrum but in a quantity less than required for sensitivity in said desired radiation spectrum; annealing said semiconductor material at a temperature greater than the subsequent degassing temperature for a period of time effective to increase the impurity concentration to a level sufficient to render the semicoductor material sensitive to the desired radiation spectrum, said concentration being substantially more stable at lower degassing temperatures than the initial impurity concentration; positioning said semiconductor material as a target within a radiation sensitive camera tube enclosure; and degassing said camera tube enclosure by heating said enclosure including said target for driving the gas from said enclosure.

REFERENCES:
patent: 2981777 (1961-04-01), Reynolds
patent: 3185891 (1965-05-01), Redington et al.

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