Ohmic contact electrodes for N-type semiconductor cubic boron ni

Details Ohmic contact electrodes for N-type semiconductor cubic boron ni Ohmic contact electrodes for N-type semiconductor cubic boron ni

1993-05-13

1995-06-06

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257761, 257770, 257741, H01L 2948

Patent

active

054225000

ABSTRACT:
An ohmic contact electrode formed on an n-type semiconductor cubic boron nitride by using a IVa metal or an alloy with a IVa metal or a layer of Au or Ag.

REFERENCES:
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patent: 5057454 (1991-10-01), Yoshida et al.
patent: 5091208 (1992-07-01), Pryov
patent: 5187560 (1993-02-01), Yoshida et al.
patent: 5285109 (1994-02-01), Tomikawa et al.
Willardson et al, Semiconductors and Semimetals, Academic Press, 1981, vol. 15, pp. 1, 9-18.
Kimura et al, "Humidity--Sensitive Electrical properties and Switching Characteristics of BN Films", Thin Solid Films, vol. 70, No. 2, Aug. 1, 1980, Lausanne, pp. 351-362.
Mishima et al, "Ultraviolet Light--Emitting Diode of a Cubic Boron Nitride pn Junction Made at High Pressure", Applied Physics Letters, vol. 53, No. 11, Sep. 12, 1988, pp. 962-964.

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