Mask and charged particle beam exposure method using the mask

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2504911, 250398, H01J 37304

Patent

active

054224918

ABSTRACT:
A charged particle beam exposure method exposes a desired exposure pattern on a substrate by a charged particle beam of a beam source and a deflection system for deflecting the charged particle beam transmitted through a mask. The method includes providing the mask having formed therein a plurality of exposure patterns and a plurality of position matching patterns, where each of the position matching patterns has a predetermined, fixed positional relationship to at least an adjacent exposure pattern in the mask, in a first step, exposing a first one of the plurality of position matching patterns in the mask at a predetermined position on the substrate by directing the charged particle beam through the selected position matching pattern in the mask and onto the predetermined position on the substrate, in a second step, detecting the irradiating position of the charged particle beam on the substrate, as directed through the first position matching pattern, in a third step, calculating an error between the predetermined position on the substrate and the irradiating position of the charged particle beam which is irradiated on the substrate through the first position matching pattern, in a fourth step, determining a correction amount for the desired exposure pattern which is adjacent to the first position matching pattern in the mask based on the calculated error, and in a fifth step, controlling the deflection system based on the correction amount so that the calculated error becomes approximately zero.

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