Method of making a trench capacitor field shield with sidewall c

Details Method of making a trench capacitor field shield with sidewall c Method of making a trench capacitor field shield with sidewall c

1993-05-03

1995-06-06

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437203, 437919, H01L 218229

Patent

active

054222940

ABSTRACT:
Structures and methods are presented for forming a field shield for a trench capacitor for a memory cell with a contact through insulator along a sidewall of the trench to a desired region of the semiconducting substrate. The desired region is typically held at a substantially fixed potential; in any case it does not include a node diffusion.

REFERENCES:
patent: 4278473 (1981-07-01), Borden
patent: 4791463 (1988-12-01), Malhi
patent: 4801988 (1989-01-01), Kenney
patent: 4873560 (1989-10-01), Sunami et al.
patent: 4918502 (1990-04-01), Kaga et al.
patent: 5026659 (1991-06-01), Lee
patent: 5041887 (1991-08-01), Kumagai et al.
patent: 5096849 (1992-03-01), Beilstein, Jr. et al.
patent: 5100823 (1992-03-01), Yamada
patent: 5164917 (1992-11-01), Shichijo

Affiliated with

Also associated with

Rating

Method of making a trench capacitor field shield with sidewall c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a trench capacitor field shield with sidewall c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a trench capacitor field shield with sidewall c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-987329