Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1998-03-26
2000-09-12
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257461, H01L 310232, H01L 3100
Patent
active
06118165&
ABSTRACT:
A photodiode that is less susceptible to electromagnetic noise without a shield case is produced by forming an n-type layer on a p-type substrate serving as a first p-type layer, separating the n-type layer from side edges by providing a p-type separation strip around the n-type layer, forming a second p-type layer on the n-type layer with part of the latter left uncovered, and coating the entire surface with a protective film layer. On the protective film layer, a first and a second electrode are provided, and, through an opening formed in the protective film layer, the first electrode is connected to the n-type layer and the second electrode is connected to the p-type separation strip and to the second p-type layer. The second electrode is connected to the ground level so that the first and second p-type layers are kept at the ground level, whereas the electric charge produced through photoelectric conversion is fed out from the first electrode. The second p-type layer, connected to the ground level and thus having a low impedance, serves as a shield that shuts out electromagnetic noise from the surface.
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patent: 5767538 (1998-06-01), Mullins et al.
patent: 5903021 (1999-05-01), Lee et al.
Monin, Jr. Donald L.
Rohm & Co., Ltd.
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