Integrated circuit with active devices under bond pads

Details Integrated circuit with active devices under bond pads Integrated circuit with active devices under bond pads

1995-10-30

1998-05-12

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257773, 257786, H01L 2348

Patent

active

057510652

ABSTRACT:
Active circuitry is placed under the bond pads in an integrated circuit having at least three metal levels. The metal level adjacent the bond pad level acts as a buffer and provides stress relief and prevents leakage currents between the bond pad and underlying circuitry.

REFERENCES:
patent: 4636832 (1987-01-01), Abe et al.
patent: 4984061 (1991-01-01), Matsumoto
patent: 5502337 (1996-03-01), Nozaki
"A New Integration Technology that Enables Forming Bonding Pads on Active Areas" K. Nukai, A. Hiraiwa, S. Muramatsu, I. Yoshida, and S. Harada, Central Research Laboratory, Hitachi, Ltd., Kukubunji, Tokyo 185, Japan.

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