Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1997-10-16
1998-05-12
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257173, 257355, 361 56, 361 57, 361 91, 361 98, 361100, H01L 2900, H02H 900
Patent
active
057510512
ABSTRACT:
A semiconductor device has a semiconductor chip which is divided into a plurality of separate regions. In each of these regions, there are provided a plurality of common discharge lines which are independent from one another, a plurality of first bonding pads which are connected directly to the respective common discharge lines, a plurality of second bonding pads which are not connected directly to the common discharge lines, a plurality of protective elements which are connected between the second bonding pads and the common discharge lines, and an inner lead for discharging which is directly connected to the first bonding pads and is bonded to a surface of the semiconductor chip. In all embodiments of the invention. More than one common discharge line is provided. This arrangement permits the reduction of the chip area thus enhancing design freedom and improving electrostatic breakdown characteristics.
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patent: 5442217 (1995-08-01), Mimoto
patent: 5521783 (1996-05-01), Wolfe et al.
patent: 5561577 (1996-10-01), Motley
patent: 5629545 (1997-05-01), Leach
Nikkei Microdevice, Nov. 1991, pp. 79-83.
NEC Corporation
Saadat Mahshid D.
Wilson Allan R.
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