High-breakdown-voltage semiconductor device

Details High-breakdown-voltage semiconductor device High-breakdown-voltage semiconductor device

1981-02-04

1984-04-17

Davie, James W.

357 35, 357 51, H01L 2944, H01L 2704, H01L 2972

Patent

active

044438125

ABSTRACT:
A high-breakdown-voltage semiconductor device wherein a resistor body made of a P-type impurity region is disposed in a surface region of an N-type semiconductor body so as to form a resistor element, a P-type low doped region is disposed around the resistor body, and a plate layer which extends from a high potential electrode of the resistor body covers a main part of the P-type low doped region.

REFERENCES:
patent: 4161742 (1979-07-01), Kane
patent: 4319262 (1982-03-01), Bertotti et al.

Affiliated with

Also associated with

Rating

High-breakdown-voltage semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-breakdown-voltage semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-breakdown-voltage semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-98212