Semiconductor device

Details Semiconductor device Semiconductor device

1982-04-02

1984-04-17

Edlow, Martin H.

357 34, 357 43, 357 46, 357 52, 357 88, H01L 2948, H01L 2972, H01L 2702, H01L 2934

Patent

active

044438087

ABSTRACT:
A semiconductor device having a high breakdown voltage transistor and a Schottky barrier diode. The Schottky barrier diode is formed in a surface portion of a semiconductor layer adjacent to the base region of the transistor, and a well layer of the same conductivity type as and of a lower impurity concentration that of the aforementioned semiconductor layer is formed under the Schottky barrier diode.

REFERENCES:
patent: 3737742 (1973-06-01), Breuer et al.
patent: 3962590 (1976-06-01), Kane et al.
Carballo et al., "Self-Contained Bipolar-FET Device", IBM Tech. Discl. Bull., vol. 19, No. 11, pp. 4191-4192, Apr. 1977.
Gani et al., "Bilevel Dual Impedance Monolithic Structure", IBM Tech. Discl. Bull., vol. 18, No. 5, p. 1407, Oct. 1975.

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