Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1994-10-26

1998-05-12

Tsai, Jey

Fishing, trapping, and vermin destroying

437149, 437958, H01R 2122

Patent

active

057504148

ABSTRACT:
An integrated circuit (IC) (20) is formed on a semiconductor substrate (21). The IC has a PN junction (28) and a graded junction termination (27). A reverse field plate (31) is mounted adjacent the junction termination. One end of the field plate is mounted on and electrically connected to the substrate; the remainder of the field plate extends over a passivating oxide layer (30) which covers the substrate surface (29) adjacent the junction termination. The field plate provides a common potential surface which maintains a fixed potential on the substrate surface at the junction termination.

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Imaizumi et al., "Novel IC Structure for 150V High-Voltage Consumer IC", IEEE Transactions on Consumer Electronics, vol. CE-26, No. 3 (Aug. 1980), pp. 367-374.
Manchanda et al., "A High-Performance Directly Insertable Self-Aligned Ultra-Rad-Hard and Enhanced Isolation Field-Oxide Technology for Gigahertz Silicon NMOS/CMOS VLSI", IEEE Transactions on Electron Devices, vol. 36, No. 4 (Apr. 1989), pp. 651-658.
B.J. Baliga, "Field Plates", Modern Power Devices, John Wiley & Sons, Inc. (1987), pp. 116-119.

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