Field effect semiconductor laser, method of modulation thereof

Coherent light generators – Particular active media – Semiconductor

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357 17, 372 46, 372 50, H01S 319

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044083300

ABSTRACT:
A field effect semiconductor laser has two clad layers and an active layer therebetween, formed by an epitaxial growth on a semiconductor substrate, which is mesa-etched to form a stripe-shaped mesa part of a double heterostructure on the semiconductor substrate. The laser further includes first and second buried layers of conductivity types opposite to each other and formed on both sides of the mesa-etched part, respectively. Gate electrodes G are formed on at least one of the top faces of the buried layers, and a drain electrode D is formed on the mesa-etched double heterostructure part. Depletion layers are produced at the junction interfaces between the first and the second buried layers when a reverse-bias voltage is applied across pairs of these buried layers. The thickness of the depletion layers, and thus a refractive index of a part of the buried layer neighboring outside the active layer, can be controlled by changing the external voltage applied to the gate electrode G, and the laser oscillation can be directly controlled by a voltage signal thereby enabling effective and high speed modulation of the laser.

REFERENCES:
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App. Phys. Lett. vol. 29, No. 10, Nov. 15, 1976, pp. 652-654.
An et al, "Field Effect Semiconductor Lasers", IEEE Journal of Quantum Electronics, vol. QE-16, No. 12, Dec. 1980, pp. 1300-1302.
Fukuzawa et al., "Monolithic Integration of a GaAlAs Injection Laser with a Schottky-Gate Field Effect Transistor", Appl. Phys. Lett., vol. 36, No. 3, Feb. 1, 1980, pp. 181-183.
Yust et al., "A Monolithically Integrated Optical Repeater", Appl. Phys. Lett. vol. 35, No. 10, Nov. 15, 1979, pp. 795-797.
Reinhart et al., "Electro-Optic Frequency- and Polarization-Modulated Injection Laser", Appl. Phys. Lett, 36(12), Jun. 15, 1980, pp. 954-957.
Ury, et al. "Monolithic Integration of an Injection Laser and a Metal Semiconductor Field Effect Transistor", Appl. Phys. Lett., 34(7), 4/1/79, p. 430.

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