Patent
1988-12-15
1990-07-17
Clawson, Jr., Joseph E.
357 49, 357 51, 357 53, 357 59, H01L 2974
Patent
active
049424467
ABSTRACT:
In a thyristor to which a semiconductor device according to the present invention is applied, at least one p-n junction is exposed at one surface of a semiconductor substrate, a polysilicon field plate is formed, via an insulating film, over the p-n junction of the semiconductor substrate and a gate region formed therein, so that the exposed portion of the p-n junction is covered by the field plate, and two specific regions of the field plate are electrically connected to the gate region and cathode region to form a gate-cathode resistance between the gate region and the cathode region. The resistance of the polysilicon field plate, inserted between the gate region and the cathode region, can be determined by the length of the polysilicon field plate therebetween and/or the concentration of an impurity in the polysilicon field plate therebetween.
REFERENCES:
patent: 4016592 (1977-04-01), Yatsuo et al.
patent: 4157563 (1979-06-01), Bosselaar
patent: 4691223 (1987-09-01), Murakami et al.
Patent Abstracts of Japan, vol. 5, No. 179 (E-82) [851], Nov. 17, 1981; and JP-A-56 105 673 (Nippon Denki K.K.) 8-22-81.
Patent Abstracts of Japan, vol. 8, No. 176 (E-260) [11613], Aug. 14, 1984; and JP-A-59 695 970 (NEC Home Electronics K.K.) 4-20-84.
Clawson Jr. Joseph E.
Kabushiki Kaisha Toshiba
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