Method for forming a semiconductor device isolation region

Details Method for forming a semiconductor device isolation region Method for forming a semiconductor device isolation region

1991-09-16

1992-12-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 72, H01L 2176

Patent

active

051734443

ABSTRACT:
A method for forming a semiconductor device isolation region including steps of forming a first silicon oxide film on a silicon substrate, depositing a first silicon nitride film over the first silicon oxide film, and removing the first silicon oxide film and first silicon nitride film in a device isolation region by using a resist pattern, which is formed by a one-time photolithographic step, as a mask so as to expose the surface of the silicon substrate, removing the resist pattern, and oxidizing the exposed surface of the silicon substrate so as to form a second silicon oxide film having a smaller thickness than the first silicon oxide film and to deposit a second silicon nitride film, removing the second silicon nitride film by anisotropic etching until the second silicon oxide film is exposed in the device isolation region so as to make the second silicon nitride film remain as the side wall portion of the silicon nitride film in only the opening side wall portion of the first silicon nitride film, etching the second silicon oxide film in the opening of the first silicon nitride film on a self-aligning basis by using as etching masks the first silicon nitride film and the side wall portion of the second silicon nitride film remaining on the opening side wall portion of the first silicon nitride film, and selectively carrying out oxidation so as to form a thick silicon oxide film in the device isolation region.

REFERENCES:
Wolf, S., et al., Silicon Processing for the VLSI Era vol. 2 Process Integration, pp. 43-44, 1990.

Affiliated with

Also associated with

Rating

Method for forming a semiconductor device isolation region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a semiconductor device isolation region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a semiconductor device isolation region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-975127