High voltage semiconductor devices with reduced on-resistance

Details High voltage semiconductor devices with reduced on-resistance High voltage semiconductor devices with reduced on-resistance

1988-09-09

1990-07-17

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 22, 357 41, 357 43, 357 53, 307631, 307633, 307571, H01L 2978

Patent

active

049424408

ABSTRACT:
A high voltage P-N diode includes a P.sup.- substrate with a thin N.sup.- epitaxial layer thereon. An N.sup.+ cathode region extends into the N.sup.- epitaxial layer from the upper surface thereof. A P.sup.+ anode region extends into the N.sup.- epitaxial layer from its upper surface and surrounds the N.sup.+ cathode region. An N.sup.+ buried layer is situated between the P.sup.- substrate and the N.sup.- epitaxial layer, beneath the P.sup.+ anode region, and surrounds the N.sup.+ cathode region, as viewed from above. A further P.sup.+ region extends into the N.sup.- epitaxial layer from its upper surface and surrounds the N.sup.+ cathode region, and, in turn, is surrounded by the P.sup.+ anode region. In an exemplary embodiment, a MOSFET is included to alternately connect the further P.sup.+ region to the P.sup.- substrate and to open circuit the further P.sup.+ region. With the further P.sup. + region open circuited, the P-N diode has a low on-resistance when it operates in its current-conducting state. An embodiment structurally similar to the P-N diode comprises a bipolar transistor having an N.sup.+ emitter region extending into a P.sup.+ base region, which corresponds to the P.sup.+ anode region of the diode.

REFERENCES:
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M. Cowan et al., "Combat Lat. PNP . . . , Device", IBM Tech. Discl. Bull., vol. 13 #4, Sep. 1970, pp. 939-940.
R. Hruby et al., "Substrate-Emitter . . . Appl.", IEEE J. S-S Ckts., vol. SC-6 #3, Jun. 1971, pp. 115-119.

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