Magnesium doping of AlGaAs

Details Magnesium doping of AlGaAs Magnesium doping of AlGaAs

1977-11-07

1978-11-28

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

136 89SG, 148171, 148172, H01L 21208

Patent

active

041269306

ABSTRACT:
Aluminum gallium arsenide is used as a transparent, conducting contact layer on the exposed surface of a gallium arsenide photovoltaic cell. Increased conductivity for the high current generated when concentrated solar radiation strikes the cell, is provided by doping the AlGaAs layer with magnesium. During the formation of the layer, Mg diffuses into the gallium arsenide to form a p-type layer and a p-n junction.

REFERENCES:
patent: 3615931 (1971-10-01), Arthur
patent: 3675026 (1972-07-01), Woodall
patent: 3751310 (1973-08-01), Cho
patent: 3839084 (1974-10-01), Cho et al.
Hovel et al., IBM Technical Disclosure Bulletin, vol. 15, No. 12, May 1973, p. 3741.
Hovel et al., IBM Technical Disclosure Bulletin, vol. 16, No. 7, Dec. 1973, pp. 2079 and 2080.

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