Method of forming a nonvolatile random access memory capacitor c

Details Method of forming a nonvolatile random access memory capacitor c Method of forming a nonvolatile random access memory capacitor c

1993-08-02

1995-08-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

054398401

ABSTRACT:
A capacitor with a metal-oxide dielectric layer is formed with an upper electrode layer that is electrically connected to an underlying circuit element. The capacitor may be used in forming storage capacitors for DRAM and NVRAM cells. After forming an underlying circuit element, such as a source/drain region of a transistor, a metal-oxide capacitor is formed over the circuit element. An opening is formed through the capacitor and extends to the circuit element. An insulating spacer is formed, and a conductive member is formed that electrically connects the circuit element to the upper electrode layer of the metal-oxide capacitor. Devices including DRAM and NVRAM cells and methods of forming them are disclosed.

REFERENCES:
patent: 4952904 (1990-08-01), Johnson et al.
patent: 5005102 (1991-04-01), Larson
patent: 5046043 (1991-09-01), Miller et al.
patent: 5109357 (1992-04-01), Eaton, Jr.
patent: 5142437 (1992-08-01), Kammerdiner et al.
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5155573 (1992-10-01), Abe et al.
patent: 5164808 (1992-11-01), Evans, Jr. et al.
patent: 5185689 (1993-02-01), Maniar
patent: 5191510 (1993-03-01), Huffman
patent: 5254217 (1993-10-01), Maniar et al.
patent: 5257238 (1993-10-01), Lee et al.
patent: 5258093 (1993-11-01), Maniar
patent: 5283462 (1994-02-01), Stengel
patent: 5350703 (1994-09-01), Brassingtan et al.
Kinney, et al.; "A Non-Volatile Memory Cell Based on Ferroelectric Storage Capacitors"; IEDM; pp. 850-851 (1987).
Wolf; "Silicon Processing for the VLSI Era"; vol. 2; pp. 635-638 (1990).
Wu, et al; "Integr. of Ferroelectric PZT Capacitors W/GaAs JFET Dev."; Proceed. of the 3rd Internat'l Symp. on Integ. Ferroelectrics; McDonnell Douglass Elect. Sys. Co.; pp. 390-403 (1991).
Azuma et al. "3rd International Syposium on Integrated Ferroelectrics;" ISIF-91; University of Colorado at Colorado Springs; pp. 414-430 (1991).

Affiliated with

Also associated with

Rating

Method of forming a nonvolatile random access memory capacitor c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a nonvolatile random access memory capacitor c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a nonvolatile random access memory capacitor c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-970842