Method of improving magnetoresistive effect in thin magnetic fil

Details Method of improving magnetoresistive effect in thin magnetic fil Method of improving magnetoresistive effect in thin magnetic fil

1984-03-30

1986-08-05

Pianalto, Bernard D.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192EC, 427128, 427130, 427132, H01F 1002

Patent

active

046041761

ABSTRACT:
A method of fabricating a thin magnetic film having improved magnetoresistive readout characteristics as a binary memory device is disclosed. The film is initially formed from a metal vapor as a series of discrete grains upon a substrate surface that is heated to approximately 300.degree. C. Upon continued growth of the film, the grains merge at their boundaries forming a continuous thin film, the grain boundary heights of which, e.g., 1000 .ANG., are substantially greater than the thickness, e.g., 320 .ANG., of the eventual thin magnetizable film. The thin film is then rotated while being ion milled at an oblique angle to a substantially uniform film thickness of e.g. 320 .ANG..

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